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氮化镓

网络GaN; Gallium Nitride; InGaN

氮化镓

网络释义

氮化镓

GaN

...等优点，是现今制作蓝绿光到紫外光的最好材料，而且氮化镓(GaN)可以忍受非常高的长晶温度(1000℃以上)、可以得到品 …

Gallium Nitride

他主导氮化镓 (Gallium Nitride) 材料研发的成功，在已有的红光、黄绿光发光二极管 (LED) 基础上，促成了蓝光 LED 的工业量 …

InGaN

氮化镓(INGAN)和铟镓磷化铝(INGAALP)的使用创造了更多各种各样的颜色(特别是采用INGAN工艺,通过紫外线发出的蓝光),通 …

GaN-Based

主要产品：高亮度氮化镓（GaN-Based）蓝、绿光发光二极管磊芯片及晶粒、氮化镓（GaN-Based）紫外光（UV）发光二极 …

Gallium Nitride, GaN

氮化镓(Gallium nitride,GaN)被视为制作高功率电子组件的新一代材料,但到目前为止该材料都受到约略高于250V的崩溃电压(bre…

eGaN

　　增强型氮化镓（eGaN）FET与硅功率MOSFET相比有许多优势，而且就像MOSFET一样，许多设计人员想通过并联器件来提高 …

GaAs

本实验的结果也适用于其他类型的晶圆，如氮化镓(GaAs)、碳化硅（SiC）、蓝宝石等。另外还依据实验结果及分析来选择合适 …

AlN

...硅(SiN)、氧化硅(SiO)、氧化镓(GaO)、氮化镓 (AlN)或氮化硼(BN)，将有助于改善LED裸晶的芯片质量。专利中写道，纳米微 …

例句：

The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride .

这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。

Currently , using photo -enhance chemical etching (PEC) has been proven to be an efficient method to roughen then-type GaN surface .

现在，光辅助化学湿蚀刻法（photo-enhancechemicalwetetchingmethod ）已被证实可以有效的粗化 N 型氮化镓表面，且会形成规则的六面体形状。

and finally changing the air pressure of a growth chamber to grow a gallium nitride layer .

最后改变生长室气压，生长一层氮化镓层。

Regular pyramids would form on then-GaN surface . We use KOH solution to be the etching solution of PEC process.

我们使用氢氧化钾溶液（KOH ）当作 PEC 的蚀刻液去蚀刻 N 型氮化镓表面。

The main part of the book deals with the production and characteristics of GaN LDs and LEDs.

三是与生产和氮化镓发光二极管激光器和特色的图书交易的主要部分。

The measurement was achieved by deflecting GaN nanorods with a conductive atomic force microscope PtIr tip in contact.

这个实验是利用导电性原子力显微术去弯曲氮化镓奈米柱。

Gallium nitride is a semiconductor used to create bright-blue LEDs.

氮化镓是一种用来生产亮蓝色 LED 的半导体。

GaN will also give the warfighter significantly more mobility, capability and reliability on the battlefield .

氮化镓将给予作战人员在战场上更大的机动性、效能和可靠性。

Gallium Nitride - New Material for Microwave and Optoelectronics .

氮化镓 -微波与光电元件的新材料。

Yet even at this early stage he thinks gallium nitride-on-silicon LEDs would make commercial sense .

虽然阶段尚早，他仍旧认为硅晶片氮化镓定然会有可观商业效益。

Because of the applications in UV -Blue light emitting devices, gallium nitride materials have drawn much attention .

氮化镓材料因其在蓝紫外光发光元件上的应用而广受各界注意。

A gallium nitride LED on sapphire has a typical internal quantum efficiency of around 70%.

蓝宝石上制作的氮化镓 LED 内部量子效率高达 70%；

step 6, cutting sample into heat sink for flip of the single nitride-based laser .

将样片分割成单个氮化镓基激光器倒装用的热沉。

Most of the white LEDs now on the market are based on gallium nitride .

现在市面上大部分 LED 都是基于氮化镓技术。

Study of Synthesis of GaN powders and its structural properties

氮化镓粉末的合成及其结构性质的研究

High performance gallium nitride based blue light emitting diode material epitaxy and dry etching fabrication technology

氮化镓基高亮度发光二极管材料外延和干法刻蚀技术

Abnormal characteristic measurement of GaN Schottky junction UV detectors

氮化镓肖特基结紫外探测器的异常特性测量

Application of GaN in optoelectronics and microelectronics device

氮化镓在光电子和微电子器件中的应用

Synthesis and Luminescence of Gallium Nitride LED Blue Light Conversion Materials

氮化镓发光二级管蓝光转换材料的合成和发光性质

Growth of p-GaN at low temperature and its properties as light emitting diodes

p 型氮化镓的低温生长及发光二极管器件的研究

The Research Progress in Synthesis and Application of Gallium Nitride-Based Materials

氮化镓基材料的合成研究进展

Structural characterization of high quality GaN nanowires

高质量氮化镓纳米线的结构表征

Effects of Metal Lithium on Nanocrystalline Gallium Nitride Under Ammonthermal Conditions

氨热条件下锂作矿化剂合成氮化镓纳米晶的研究

GaN Based Negative Electron Affinity Photocathode

负电子亲和势氮化镓光电阴极

Synthesis and investigation of micron sized GaN whiskers and nanowires

氮化镓微米晶须及纳米线的制备与研究

氮化镓

氮化镓

GaN